The Application of Phosphorous Acid in Chip Manufacturing
Phosphorous acid (H3PO3),CAS,13598-36-2 plays a critical, albeit behind-the-scenes,role in semiconductor manufacturing. Its primary application is as a corrosion inhibitor in post-Chemical Mechanical Planarization (CMP) cleaning solutions, specifically for protecting advanced metal interconnects like cobalt and copper.
The Problem: Post-CMP Corrosion
During chip fabrication, Chemical Mechanical Planarization (CMP) is used to polish and flatten the wafer surface after depositing metal layers (like copper wires or cobalt plugs and barriers). After polishing, the wafer must be cleaned.
The problem is that these freshly polished,exposed metals—particularly copper (Cu) and, even more critically, cobalt (Co)—are highly susceptible to electrochemical corrosion in the aqueous cleaning solutions.This corrosion, often accelerated by dissolved oxygen, leads to:
Surface Defects: Pitting and etching of the metal lines, making them rough and uneven.
Performance Degradation: Increased electrical resistance in the interconnects, which slows down the chip and increases power consumption.
Yield Loss: Severe corrosion can render the chip defective.
The Solution: Phosphorous Acid as a Corrosion Inhibitor
Phosphorous acid is added to the post-CMP cleaning chemistry as a highly effective corrosion inhibitor. Its mechanism is particularly elegant and effective.
Mechanism of Action: A Self-Limited Passivation Process
1. Adsorption and Oxidation: The phosphorus atom in phosphorous acid has a +3 oxidation state, giving the molecule mild reducing properties.It adsorbs onto the surface of the metal (e.g., cobalt).
2. Formation of a Protective Film: On the metal surface, phosphorous acid is slightly oxidized and reacts with metal ions (e.g., Co²⁺) to form an extremely thin, dense, and insoluble metal phosphite layer (e.g., cobalt phosphite, CoHPO₃). This film conforms perfectly to the metal's topography.
3. Self-Limiting Growth: A key feature of this process is that it is self-limiting. Once this dense, passivating film forms, it blocks further contact between the underlying metal and the cleaning solution, automatically halting the reaction. This controllability is essential for not altering the precise dimensions of the nanoscale metal features.
4. Isolation from Corrosion: This ultra-thin phosphite film acts as a protective barrier, effectively isolating the reactive metal from oxidizers (like O₂) in the environment, thereby significantly suppressing corrosion.
Analogy:It's like applying a monolayer of ultra-thin, transparent, and self-stopping "anti-corrosion paint" onto the metal surfaces.
Why is Phosphorous Acid CAS,13598-36-2 So Important?
1. Critical for Advanced Technology Nodes: As chip manufacturing processes shrink to 7nm, 5nm, and below, the dimensions of transistors and interconnects become incredibly small. Cobalt has become essential in these advanced nodes for contacts and barriers because it offers better electromigration reliability than copper at these tiny scales. Protecting these delicate cobalt structures from corrosion is paramount for achieving high yield and chip reliability, and phosphorous acid excels at this task.
2. Excellent Compatibility: Phosphorous acid can be effectively formulated with other cleaning agents (such as chelators and surfactants) in post-CMP cleaning solutions.This allows for the simultaneous removal of polishing residues (abrasives,slurry particles) and provides superior corrosion protection.
3. High Efficiency and Selectivity: It offers robust protection for cobalt and copper while having minimal impact on other materials on the chip, such as silicon dioxide insulating layers.
Summary
In summary, phosphorous acid CAS,13598-36-2 is a key enabling chemistry in modern chip manufacturing. Its role as a corrosion inhibitor in post-CMP cleaning is vital for protecting the nanoscale copper and, especially, cobalt interconnects in advanced logic chips.By forming a self-limiting protective film, it prevents defects, ensures low electrical resistance, and ultimately safeguards the performance and manufacturing yield of high-end semiconductors. It is a quintessential example of a simple chemical playing a sophisticated and critical role in a highly complex process.
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